Room temperature InPSb/InAs and InPSb/InAs/ InAsSb mid-infrared emitting diodes grown by MOVPE

摘要

Strained InAsSb heterostructures are important materials for a variety of new III-V based mid-infrared emitters. In the study InP_0.69Sb_0.31/InAs light-emitting diodes (LEDs) employing an InAs/InAs_0.94Sb_0.06 multiquantum- well (MQW) active region have been investigated. They were characterised using electro-optical techniques and X-ray diffractometry. The authors have measured the temperature dependence of electroluminescence (EL): at low temperatures, the EL-intensity of the MQW diodes is higher than that of a simple PIN InPSb/InAs/InPSb structure. For both devices, room temperature EL could be resolved (emission wavelength of 3.3μm, FWHM of 70meV) which is related to InAs near-bandgap transitions. InAsP/InAsSb MQWs were grown to achieve higher antimony contents in the wells. The heterostructures were strain- balanced and enabled an antimony incorporation of 24/100 with, at the same time, high structural quality. In the photoluminescence (PL) spectra of InAs_0.95P_0.05/InAs_0.86Sb_0.14 MQWs strong features were observed around 4.2μm due to atmospheric CO_2 absorption.