Full-swing high speed CBiCMOS digital circuit for low-voltage applications

摘要

A new complementary BiCMOS circuit to achieve full-swing and high speed for low-voltage applications is presented. The proposed circuit utilises the parasitic lateral bipolar transistor, generic to the CMOS process, to speed up the pull-down transient performance. It is based on the submicron technologies and specifically designed, simulated, and comparatively evaluated for low supply voltages. The analysis, simulations and SPICE results are used, not only to confirm the functionality of the circuit but also to compare its performance in terms of speed, output voltage swing, power dissipation, and cascading (chain) effect. Experimental results have been obtained to evaluate the BiFET action in a BiCMOS low voltage environment.