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Low-power CMOS integrated circuits for radio frequency applications

机译:用于射频应用的低功率CMOS集成电路

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This paper presents results for a mixer, two voltage-controlled oscillators (VCOs) and a frequency doubler (FD) suitable for low-power CMOS radio frequency (RF) systems. Results are first described for a mixer which uses the body terminal of the transistor as one of the inputs to down-convert a 1.9 GHz RF signal to a 250 MHz intermediate-frequency signal. Next, two VCOs are described. The first VCO is an ultra-low-power oscillator designed to operate in the 2.4 GHz industrial scientific medical band with a supply of 0.4V. The second VCO described is a fully integrated LC-tank VCO with automatic amplitude control operating at 4 GHz. Frequency tuning for this VCO is performed by accessing the body of cross-coupled transistors of the VCO core. Finally, a wideband, low-power implementation of a frequency doubler is presented. The frequency doubler consists of two identical unbalanced source-coupled pairs with different W/L ratios, whose inputs are connected in parallel and its output taken single-ended. The FD is based on the MOS transistor in saturation. All circuits were designed in a deep n-well 0.18 (mu)m technology, allowing application of different potentials to the body of different NMOS transistors.
机译:本文介绍了适用于低功率CMOS射频(RF)系统的混频器,两个压控振荡器(VCO)和倍频器(FD)的结果。首先描述混频器的结果,该混频器使用晶体管的主体端子作为输入之一,以将1.9 GHz RF信号下变频为250 MHz中频信号。接下来,描述两个VCO。第一个VCO是一个超低功耗振荡器,设计用于在0.4 GHz电源的2.4 GHz工业科学医疗频段上工作。所描述的第二个VCO是完全集成的LC储罐VCO,具有在4 GHz下运行的自动幅度控制。通过访问VCO内核的交叉耦合晶体管的主体来执行此VCO的频率调谐。最后,介绍了倍频器的宽带,低功耗实现。倍频器由两对相同的不平衡的源耦合对组成,它们具有不同的W / L比,它们的输入并联连接,其输出为单端。 FD基于饱和的MOS晶体管。所有电路均采用0.18μm的深n阱技术设计,可将不同的电势施加到不同的NMOS晶体管的主体上。

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