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CMOS implementation of precise sample-and-hold circuit with self-correction of the offset voltage

机译:CMOS实现具有自校正失调电压的精确采样保持电路

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The authors describe the silicon implementation of a new sample-and-hold circuit topology. Its main feature is the self correction of the offset voltage that is generated mainly by the mismatch on the differential pair at the input and the charge injected by the NMOS switches in the sampling capacitor. The circuit was implemented in a CMOS CYE 0.8 (mu)m n-well process from AMS. The results, initially obtained from simulations, were compared to real laboratory measurements. The comparison indicates that the measurements and the simulated results have a very strong correspondence. The real circuit is capable of reducing the total sample-and-hold output error to just 0.14percent at a sampling rate of 250 kHz, so that a system which operates at 250 K samples can be implemented.
机译:作者描述了一种新的采样保持电路拓扑的硅实现。它的主要特征是失调电压的自校正,该失调电压主要由输入端差分对上的失配以及采样电容器中NMOS开关注入的电荷产生。该电路是采用AMS的CMOS CYE 0.8μmn阱工艺实现的。将最初从模拟获得的结果与实际实验室测量结果进行比较。比较表明,测量结果和模拟结果具有非常强的对应性。实际电路能够以250 kHz的采样率将总的采样保持输出误差降至0.14%,从而可以实现以250 K采样工作的系统。

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