Silicon spin diffusion transistor: materials, physics and device characteristics

摘要

The realisation that everyday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on giant magnetoresistance and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In the paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents.