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Chemical behavior of energetic deuterium implanted into tungsten carbide

机译:高能氘注入碳化钨中的化学行为

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The chemical behavior of energetic deuterium implanted into tungsten carbide (WC) samples has been investigated by XPS and TDS. The TDS experiments showed that almost of all deuterium retained in WC was desorbed in the temperature region from 300 to 700 K and the residue at around 1000 K. The deuterium (D_2) desorption peak at around 1000 K was found to originate from the desorption of deuterium atom (D) trapped by carbon (C). Its retention was considerably small and was saturated at low deuterium ion (D_2~+) fluence. The area of the large D_2 desorption peaks, which corresponds to the D retention in WC, increased as D_2~+ fluence increased. The D_2 desorption in the temperature range of 300-700 K takes place in three stages, the lower two peaks were attributed to the desorption of D retained in two interstitial sites, and the highest peak corresponds to D trapped by carbon vacancies induced by chemical sputtering of C by energetic D_2~+. From these experimental results, the D trapping and detrapping behaviors are discussed and it is concluded that the hydrogen isotope retention is governed by the amount of interstitial sites and carbon vacancies in WC. The hydrogen isotope retention could be lowered if the surface temperature of WC were above 700 K.
机译:XPS和TDS研究了注入碳化钨(WC)样品中的高能氘的化学行为。 TDS实验表明,保留在WC中的几乎所有氘都在300-700 K的温度范围内解吸,残留物在1000 K左右。发现在1000 K左右的氘(D_2)的解吸峰源于C的解吸。被碳(C)捕获的氘原子(D)。它的保留量很小,并且在低氘离子(D_2〜+)通量下饱和。随着D_2〜+能量密度的增加,大的D_2解吸峰的面积与WC中的D保留量相对应。在300-700 K的温度范围内,D_2的解吸分三个阶段进行,较低的两个峰归因于保留在两个间隙位置的D的解吸,最高的峰对应于化学溅射诱导的碳空位所捕获的D D_2〜+激发C从这些实验结果,讨论了D的俘获和去俘获行为,并得出结论,氢同位素保留由WC中的间隙位置和碳空位的数量决定。如果WC的表面温度高于700 K,则氢同位素保留量可能会降低。

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