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Microstructural modification of W-SiC bonded plate during high temperature exposure

机译:高温暴露下W-SiC粘结板的微观结构改性

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摘要

R&D and technology integration of high performance materials for plasma facing components (PFCs) are important to realize in fusion reactor. Tungsten is becoming a prime candidate as a PFCs material because of the low plasma spatter rate, low hydrogen retention, and the high melting point. The utilization of tungsten is expected to suppress the plasma contamination. Although ITER employs full tungsten divertors, many issues are still remaining and need to be researched for fusion reactor after DEMO. The SiC/SiC composite is a candidate material for components of after DEMO reactor, and especially, SiC/SiC composites fabricated by Nano-Infiltration and Transient Eutectic phase (NITE) method have various advantages. From the view of divertor structural materials, because of small mismatch in coefficient of thermal expansion between tungsten and SiC is a great advantage, the application of SiC/SiC composites armored by tungsten will be an attractive option of divertor concepts in future. This paper provides the stability of W-SiC bonded plate at high temperature. The W-Si and W-C phases are observed around the interface of W-SiC bonded plate. Microstructural modification of W-SiC interface before and after high temperature exposure test is characterized using shear test and microscopes. (C) 2015 Elsevier B.V. All rights reserved.
机译:面向等离子体组件(PFC)的高性能材料的研发和技术整合对于在聚变反应堆中实现至关重要。钨由于其等离子体飞溅率低,氢保留量低和熔点高而正成为PFCs材料的主要候选材料。钨的利用有望抑制等离子体污染。尽管ITER使用了全钨分流器,但在DEMO之后的聚变反应堆中仍有许多问题尚待研究。 SiC / SiC复合材料是DEMO反应器后的组件的候选材料,尤其是,通过纳米渗透和瞬态共晶相(NITE)方法制造的SiC / SiC复合材料具有各种优点。从偏滤器结构材料的角度来看,由于钨和SiC之间的热膨胀系数小的不匹配是一个很大的优势,因此,用钨铠装的SiC / SiC复合材料的应用将成为将来偏滤器概念的一个有吸引力的选择。本文提供了W-SiC粘结板在高温下的稳定性。在W-SiC粘结板的界面附近观察到W-Si和W-C相。使用剪切试验和显微镜表征了高温暴露试验前后W-SiC界面的微观结构变化。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Fusion Engineering and Design》 |2016年第ptab期|1678-1681|共4页
  • 作者单位

    Muroran Inst Technol, OASIS, 27-1 Mizumoto Cho, Muroran, Hokkaido, Japan|Muroran Inst Technol, Div Mech Syst & Mat Engn, 27-1 Mizumoto Cho, Muroran, Hokkaido, Japan;

    Muroran Inst Technol, OASIS, 27-1 Mizumoto Cho, Muroran, Hokkaido, Japan;

    Muroran Inst Technol, OASIS, 27-1 Mizumoto Cho, Muroran, Hokkaido, Japan;

    Muroran Inst Technol, OASIS, 27-1 Mizumoto Cho, Muroran, Hokkaido, Japan;

    Muroran Inst Technol, OASIS, 27-1 Mizumoto Cho, Muroran, Hokkaido, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    W-SiC; Divertor; High heat flux components; High temperature exposure;

    机译:W-SiC;分流器;高热通量组分;高温暴露;

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