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Microstructure of electrodeposited tungsten coatings after 30 keV helium ion implantation

机译:30 keV氦离子注入后电沉积钨涂层的微观结构

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Compact and smooth tungsten coatings on nuclear grade graphite (IG-430) substrate were successfully prepared by an electrodeposition method from Na2WO4 - WO3 molten salt. The average grain size and the thickness of the prepared coating was about 20.34 mu m and 120 mu m, respectively. In addition, the electrodeposited tungsten coatings were subjected to ion implantation with 30 keV helium (He) ions to different fluences to evaluate their irradiation resistances. The microstructure evolution of the electrodeposited tungsten coatings was investigated. The results show that all samples suffered surface blistering after ion implantation, and the tungsten coating surface suffered more morphology changes with the increase of ion fluences. Serious blistering, ripple-like structure and grain boundary separation were formed on the coating surfaces after implantation of the highest He fluence of 1 x 10(18) cm(-2). Moreover, the levels of grain damage were dependent on the tungsten grain orientations. The levels of damage on tungsten grains with low index orientations increased in the order of (100), (110), and (111).
机译:采用电沉积方法,由Na2WO4-WO3熔融盐成功制备了核级石墨(IG-430)基底上致密而光滑的钨涂层。所制备涂层的平均晶粒尺寸和厚度分别为约20.34μm和120μm。另外,对电沉积的钨涂层进行30 keV氦(He)离子注入以不同的注量进行离子注入,以评估其耐辐射性。研究了电沉积钨涂层的微观结构演变。结果表明,离子注入后,所有样品表面均出现起泡现象,钨涂层表面的形貌变化较大。最高He注入量为1 x 10(18)cm(-2)后,在涂层表面形成了严重的起泡,波纹状结构和晶界分离。此外,晶粒损伤的程度取决于钨晶粒取向。低折射率取向的钨晶粒的破坏程度按(100),(110)和(111)的顺序增加。

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