Proposal for Fine-Tuning of Current across MEMS Device by Quantum-Electronic Structure

Hans Ludwig Hartnagel

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Proposal for Fine-Tuning of Current across MEMS Device by Quantum-Electronic Structure

机译：通过量子电子结构微调MEMS器件中电流的建议

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摘要

It is proposed that there are possibilities, where quantum electronics can be usefully employed with MEMS Structures for a number of applications.

机译：建议存在多种可能性，其中量子电子学可以有效地与MEMS结构一起用于许多应用。

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来源
《Frequenz》 |2005年第8期|p.206-207|共2页
作者
Hans Ludwig Hartnagel;
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作者单位

Institut fuer Hochfrequenztechnik, Technische Universitaet Darmstadt Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类电工技术;
关键词
resonant tunneling; semiconductor heterostructures; MEMS; bending sensor;

机译：共振隧穿;半导体异质结构;MEMS;弯曲传感器;
入库时间 2022-08-18 01:00:58

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2. A Proactive Plastic Deformation Method for Fine-Tuning of Metal-Based MEMS Devices After Fabrication [J] . Yong-Hoon Yoon, Chang-Hoon Han, Jae-Shin Lee, Microelectromechanical Systems, Journal of . 2018,第6期

机译：一种主动塑性变形方法，用于制造后基于金属的MEMS器件的微调
3. Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices [J] . T. Lalinsky, S. Hascik, Z. Mozolova, Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe . 2003,第1期

机译：基于GaAs异质结构的MEMS器件的机械固定和隔热微机械结构
4. MODULATION OF QUANTUM-ELECTRONIC DEVICES BY BENDING OF SPECIAL MEMS STRUCTURES [C] . Hans Ludwig HARTNAGEL, Mircea DRAGOMAN International Semiconductor Conference . 2004

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Proposal for Fine-Tuning of Current across MEMS Device by Quantum-Electronic Structure

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