IEDM sees transistor, memory, laser innovations

摘要

The International Electron Devices Meeting (IEDM) held Dec. 2-6,2017, in San Francisco offered imec and Leti an opportunity to disclose several innovations, imec announced three new developments: ultralow contact resistivity of 5x10-10 Ωcm~2 for gallium (Ga)-doped p-germanium (Ge) source/drain contacts, multiple key process optimizations for vertically stacked gate-all-around (GAA) silicon nanowire transistors, and a power-performance-area-cost (PPAC) analysis of different sequential 3D-integration variants using advanced 5-nm and 3-nm CMOS technology nodes. Leti, a research institute of CEA Tech, demonstrated significant improvements in the field of memory systems and announced it has integrated hybrid III-V silicon lasers on 200-mm wafers using a standard CMOS process flow.