The role of mechanical constraint upon the switching response of a ferroelectric thin film memory capacitor is explored. The memory capacitor is represented by a two dimensional ferroelectric island whose non-linear behaviour is modelled by a crystal plasticity constitutive law within the finite element method. The switching response of the device, in terms of remnant charge storage, is determined as a function of geometry and constraint. Various types of constraint on the ferroelectric capacitor are considered, including the presence of a silicon dioxide passivation layer, a silicon substrate and metallic electrodes. The effect of the relative resistance to 90 degree switching and 180 degree switching is also explored in a tetragonal ferroelectric device. Throughout the study, the finite element calculations are compared with the behaviour of a material element subjected to various degrees of mechanical constraint.
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