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Experimental study on prevention of acid mine drainage by silica coating of pyrite waste rocks with amorphous silica solution

机译:非晶态二氧化硅溶液覆盖黄铁矿废石防止酸性矿井排水的试验研究。

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Acid mine drainage (AMD) is a widespread environmental problem associated with working and abandoned mining operations. It results from the microbial oxidation of pyrite in the presence of water and air, affording an acidic solution that contains toxic metal ions. Pyrite microencapsulation, utilizing silica coating, is a novel approach for controlling AMD that has been shown to be very effective in controlling pyrite oxidation. The roles of the solution pH and silica concentration in the formation mechanism for the AMD-preventing coating were investigated. A silica coating can be formed from silica solution at pH 7, at which the amount of Fe eluted from pyrite into the solution is small. No coating was formed at other pH values, and the amounts of eluted Fe were larger than at pH 7, especially at pH 11. The silica coating forms from 2,500 to 5,000 mg/L silica solutions, but not from 0 or 1,000 mg/L silica solutions. The coating formation rate was slower in the 2,500 mg/L silica solution than in the 5,000 mg/L silica solution. The formation of silica coating on pyrite surfaces depends on three main steps: formation of Fe(OH)3 on the surface of pyrite, reaction between Fe(OH)3 and silicate in the solution on the pyrite surface, and growth of the silica layer on the first layer of silica. The best pH condition to enable these steps was around 7, and the silica coating formation rate can be controlled by the concentration of silica.
机译:酸性矿山排水(AMD)是与采矿作业和废弃采矿作业相关的广泛环境问题。它是由于水和空气中黄铁矿的微生物氧化而产生的,从而提供了一种含有有毒金属离子的酸性溶液。利用二氧化硅涂层的黄铁矿微囊化技术是一种控制AMD的新颖方法,已证明在控制黄铁矿氧化方面非常有效。研究了溶液pH和二氧化硅浓度在防止AMD涂层形成机理中的作用。可以由pH 7的二氧化硅溶液形成二氧化硅涂层,此时从黄铁矿洗脱到溶液中的Fe量很少。在其他pH值下没有形成涂层,并且铁的溶出量大于pH值为7时,尤其是在pH 11时。二氧化硅涂层的形成范围为2,500至5,000 mg / L二氧化硅溶液,而不是0或1,000 mg / L二氧化硅溶液。在2,500 mg / L的二氧化硅溶液中的涂层形成速率比在5,000 mg / L的二氧化硅溶液中的涂层形成速率要慢。在黄铁矿表面上形成二氧化硅涂层取决于三个主要步骤:在黄铁矿表面上形成Fe(OH) 3 ,Fe(OH) 3 与硅酸盐之间的反应在黄铁矿表面上的溶液中,并在第一层二氧化硅上生长二氧化硅层。实现这些步骤的最佳pH条件约为7,可以通过二氧化硅的浓度控制二氧化硅涂层的形成速率。

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