High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts

摘要

The paper is concerned with the study of the growth of AlGaSb, AlGaAsSb and InGaAsSb epilayers, which are lattice-matched to GaSb, by means of liquid-phase epitaxy (LPE) from Sb-rich melts. The obtained composition ranges were 0.02/spl les/x/spl les/0.20 for Al/sub x/Ga/sub 1-x/Sb, Al/sub x/Ga/sub 1-x/As/sub y/Sb/sub 1-x/ epilayers and 0.04/spl les/x/spl les/0.24 for In/sub x/Ga/sub 1-x/As/sub y/Sb/sub 1-y/ layers. In the photoluminescence spectra measured on AlGaSb and GaInAsSb direct-gap solid solutions, only peaks with a maximum corresponding to the bandgap were observed. No long-wavelength peaks, which correspond to defects such as V/sub Ga/+Ga/sub Sb/ and are typical of GaSb and related solid solutions grown from In- or Ga-rich melts, were found in PL spectra of the epilayers obtained.