Vacuum-silicon solid microwave diodes and triodes based on P++ -N and on tungsten cathodes

摘要

This work reports the analysis of vacuum--solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication. In addition, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes shows that the diodes with a back voltage P++ -N cathode have a wide frequency band, but an efficiency smaller than that of the tungsten diodes.