p-type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gates

摘要

Schottky gate biased p-type MODFETs with an Si/sub 0.65/Ge/sub 0.35/ channel are presented. A wet-chemical post-evaporation procedure of the Schottky gates allows the reduction of the gate length L/sub G/ to submicrometre dimensions (0.5 mu m). The gate length dependence of the transconductance g/sub me/ and g/sub mi/ is reported. Maximum values are 37 or 103 mS/mm at 300 or 77 K. The devices work in the enhancement mode.