Reliable 1.2 W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers

Jaeckel H.; Bona G.L.

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Reliable 1.2 W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers

机译：具有AlGaAs覆层的可靠的1.2 W连续波发射红色（Al）GaInP二极管激光器阵列

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来源
《Electronics Letters》 |1993年第1期|共页
作者
Jaeckel H.; Bona G.L.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. 5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP–GaInP–AlGaAs Laser Bars With Asymmetric Cladding Layers [J] . Sumpf B., Zorn M., Staske R., IEEE Photonics Technology Letters . 2006,第18期

机译：具有不对称包覆层的5mm宽650nm AlGaInP–GaInP–AlGaAs激光棒在2000小时内可实现5W可靠运行
2. Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers [J] . Unger P., Bona G.-L. IEEE Journal of Quantum Electronics . 1993,第6期

机译：具有AlGaAs覆层的低阈值应变GaInP量子阱脊激光器
3. Characterization of AlInP cladding layers with Mg and Si diffusion barriers for high-power red GaInP-AlGaInP laser diodes [J] . Kim C.Z., Choi J.H., Bae S.-J., Journal of the Korean Physical Society . 2012,第7期

机译：高功率红色GaInP-AlGaInP激光二极管具有Mg和Si扩散势垒的AlInP包层的特性
4. Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers [C] . Unger, P., Bona, . 1992

机译：具有AlGaAs包覆层的低阈值应变GaInP量子阱脊激光器
5. Thermal management, beam control, and packaging designs for high power diode laser arrays and pump cavity designs for diode laser array pumped rod shaped lasers. [D] . Chung, Te-Yuan. 2004

机译：高功率二极管激光器阵列的热管理，光束控制和封装设计，以及二极管激光器阵列抽运的棒状激光器的泵浦腔设计。
6. Effect of Laser Remelting on Cladding Layer of Inconel 718 Superalloy Formed by Laser Metal Deposition [O] . Bo Xin, Jiangyu Ren, Xiaoqi Wang, 2020

机译：激光重熔对激光金属沉积形成的Inconel 718超合金层覆层的影响
7. AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission [O] . Eugene A. Avrutin, Boris S. Ryvkin, Juha T. Kostamovaara 2021

机译：AlgaAs / GaAs不对称 - 波导，短腔激光二极管设计，靠近P-Cladding的散装有源层，用于高脉冲发射
8. Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies [R] . Goodhue, W. D., Donnelly, J. P., Wang, C. A., 1991

机译：单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列，具有超过50％的差分量子效率

Reliable 1.2 W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers

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