1.3 mu m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

摘要

The first 1.3 mu m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At differential output of the implemented multistage amplifier the transimpedance is 26.8 k Omega (into 50 Omega ). The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.