Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors

摘要

Interface state generation effects due to hot carrier phenomena are studied in n-channel undoped hydrogenated polysilicon thin-film transistors under on-current bias-stress conditions. At the initial stages of stressing, interface states are created as well as hot hole trapping. As the stress process proceeds further, a saturation of the density of generated interface states was found after which hot electron injection into the gate oxide becomes the most important factor in further device degradation.