High-gain differential CMOS transimpedance amplifier with on-chip buried double junction photodiode

摘要

An integrated fully differential CMOS transimpedance amplifier (TIA) with buried double junction photodiode input is described. The TIA features a variable high transimpedance gain (250 k/spl Omega/ to 2.5 M/spl Omega/), large DC photocurrent rejection capability (>55 dB) and low input referred noise density at 100 kHz (2pA//spl radic/Hz).