SPATIAL MODES IN BROAD-AREA SEMICONDUCTOR LASERS WITH INHOMOGENEOUSLY REFLECTING MIRROR

摘要

The paper provides first results of theoretical analysis of lateral mode generation in broad-area (B A) semiconductor laser with front mirror formed into narrow, centered with regard to low-ohmic contact, reflecting stripe, supporting oscillations of fundamental mode only and thus improving the laser beam quality. Since experiments show, that in such configuration the lasing mode is the interferometer one instead of the desired one determined by waveguide induced by pumping current supplied via wide contact stripe, the analysis considers both, diffraction and waveguiding, mechanisms inside laser cavity. The main goal of the work is to find mirror configuration allowing for maximum usage of high lasing volume of BA laser without decreasing the beam quality.