Predicted performance of high-speed integrated-injection logic using InGaAs/InP heterojunction bipolar transistors

摘要

By the use of analytical expressions and SPICE simulation, the switching performance of integrated injection logic (I/sup 2/L) using heterojunction bipolar transistors (HBTs) has been investigated. A proposed inverter configuration using InP/InGaAs HBTs which avoids saturation in the p-n-p injector has predicted propagation delays of 16 ps at only 3-mW power dissipation. Transient response analysis illustrates the importance of reducing parasitic resistances in the structure. Ring oscillator simulations indicate that switching speeds approaching those of emitter-coupled logic but with advantages in high density and low power are possible.