Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOSFET) Including High-Voltage and Floating-Body Effects

摘要

In this paper, a scalable compact model for partially depleted silicon-on-insulator drain-extended MOSFETs (PD SOI DEMOSFETs) is developed using a subcircuit approach. The proposed compact model captures the special direct-current behavior of a PD SOI DEMOSFET transistor. Our model accounts for high-voltage effects such as quasi-saturation and impact ionization in the drift region, along with a floating-body effect such as the kink effect in the output characteristics of the floating-body PD SOI DEMOSFET transistor. In the subcircuit approach used, the channel region is modeled using the BSIM4SOI model, and the drift region is modeled using a bias-dependent resistance model, along with a current-controlled current source. The model is validated for a set of channel and drift lengths to demonstrate the scalability of the model. The accuracy of the proposed compact model is verified using 2-D numerical simulations.