Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays

摘要

This paper presents a new bidirectional gate driver circuit that utilizes amorphous indium–gallium–zinc oxide thin-film transistors (TFTs). To ensure the compactness of the display system, bidirectional transmission function is implemented by adjusting the sequence of clock signals without extra controlling signal. The lifetime of the proposed gate driver circuit is increased by reducing the drain bias stress of the input TFTs. The measurement results indicate that the proposed gate driver circuit can remain stable for more than 812 h at 70 °C, demonstrating its feasibility and long-term reliability for full high-definition resolution.