DC 30-GHz DPDT Switch Matrix Design in High Resistivity Trap-Rich SOI

摘要

This paper presents low insertion loss, high isolation, ultra-wideband double-pole-double-throw (DPDT) switch matrix designed in a 0.13- commercial high resistivity trap-rich silicon-on-insulator (SOI) CMOS process for the first time. The switches are designed using series–shunt–series configuration in a ring-type structure with input and output matching networks. Transistor width and transistor channel length effects on the wideband DPDT switch performance are thoroughly investigated. The designed switches achieve widest bandwidth from dc to 30 GHz with a low insertion loss of 2.5 dB and a high isolation of 32 dB up to 30 GHz. The measured input P1dB of designed switches is higher than 18 dBm. It was found both second and third harmonics can be improved by widening switch transistor channel width, and third harmonic can be improved by shortening channel length. The active chip area of designed switch matrix is very small size of only 0.28 mm mm.