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机译:低亚阈值摆幅和超高效的超薄PEAZNO薄膜晶体管
Hanyang Univ Div Nanoscale Semicond Engn Seoul 04763 South Korea;
Hanyang Univ Div Mat Sci & Engn Seoul 04763 South Korea;
Hanyang Univ Div Mat Sci & Engn Seoul 04763 South Korea;
Performance evaluation; Semiconductor device measurement; Transmission line measurements; Thin film transistors; Indium tin oxide; Thickness measurement; Stress; Accumulation thickness; amorphous oxide thin-film transistor (TFTs); indium gallium zinc oxide (IGZO); interface scattering; plasma-enhanced atomic layer deposition (PEALD);
机译:具有小亚阈值摆幅的低压驱动柔性InGaZnO薄膜晶体管
机译:一种用于基于InGaZnO的薄膜晶体管提高器件迁移率和亚阈值摆幅的吸氧方案
机译:低亚阈值摆动和高迁移率无定形铟 - 氧化锌薄膜晶体管,具有薄的HFO2栅极电介质和优异的均匀性
机译:低亚阈值Swing A-Ingazno薄膜晶体管的示范
机译:用于高性能薄膜晶体管的非晶态金属氧化物半导体的低温溶液处理。
机译:通过使用富氢Al2O3介电层实现具有极低热收支的高性能a-InGaZnO薄膜晶体管
机译:光伏耦合双栅Ingazno薄膜晶体管在亚阈值区域操作,用于低功耗光电检测