Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture

摘要

Using the reduced resistor network developed in Part I of this two-part article, we present practical design guidelines from device to architecture levels to achieve ultrahigh-density 3-D vertical resistive switching memory (VRSM). We first design both hexagon and comb arrays using 7-nm FinFET as pillar driving transistors (pillar drivers). Small-footprint pillar drivers are necessary for a high pillar areal density competitive to 3-D NAND. We then organize the arrays into an architecture using the compact staircase and highly conductive wordplane connection (WPC) to maximize array efficiency and chip density. We investigate the memory and selector requirements, tolerance of parasitic resistances, latency, and energy consumption for both hexagon and comb architectures. The results indicate that the hexagon array with large low-resistance state (LRS) and nonlinearity (NL) is required for ultradense 3-D VRSM. Compared to the comb array, the hexagon array benefits from a continuous WP pattern and yields a better tolerance of parasitic resistances and a smaller latency. The energy consumptions of both architectures are similar. Compared to the most advanced 3-D NAND, 3-D VRSM has higher chip density and shows better potential for future ultradense storage.