Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN)

摘要

A widely used halo implant process of counter doping has a tradeoff between the short channel effects and the parasitic junction capacitance. In this letter, we propose a novel drain engineering concept, large-angle-tilt-implantation of nitrogen (LATIN) to improve the short-channel effects without the increase of the junction capacitance in the buried-channel pMOSFET using sub-0.25-/spl mu/m CMOS technology. We compare the electrical characteristics of devices fabricated using LATIN, a conventional arsenic halo implant process (As HALO), and BF/sub 2//sup +/ source/drain (S/D) implantation only. The LATIN improves the short-channel effects when compared to the case of BF/sub 2//sup +/ S/D implant only. In addition, the LATIN reduces junction capacitance by 18% when compared to As HALO. As a consequence, the LATIN is shown to be a drain engineering concept to simultaneously optimize the short-channel effects and junction capacitance. Calibrated two-dimensional simulations confirm the improvement with LATIN.