High-density MIM capacitors (/spl sim/85 nF/cm/sup 2/) on organic substrates

摘要

For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density /spl sim/85 nF/cm/sup 2/ was achieved on FR-4 substrate with PECVD silicon nitride as the dielectric layer. Excellent voltage coefficient (/spl sim/2.2 ppm/V/sup 2/) and temperature coefficient (/spl sim/38 ppm//spl deg/C) were obtained for capacitors on FR-4. Dielectric leakage and breakdown characteristics have been assessed, and the results demonstrated acceptable performance. Thus, this technology provides a new method to embed/integrate high-density capacitors on organic substrates for the system-in-package applications.