Stoichiometry Dependence of Fermi-Level Pinning in Fully Silicided (FUSI) NiSi Gate on High-K Dielectric

摘要

Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (C{sub}(cr it)) above which there is no Fermi-level pinning, and the C{sub}(cr it) depends on the underlying gate dielectric material also.