Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

摘要

The fabrication process and the characteristics of bottom-gate $ hbox{Ga}_{2}hbox{O}_{3}{-}hbox{In}_{2}hbox{O}_{3}{-}hbox{ZnO}$ (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 $hbox{cm}^{2}/hbox{V} cdot hbox{s}$ and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.