Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed $hbox{AlO}_{X}$ Gate Insulator

摘要

We demonstrate low-voltage-driven complementary metal–oxide–semiconductor (CMOS) circuits using ink-jet-printed N, N $^{prime}$  bis-(octyl-) - dicyanoperylene - 3, 4 : 9, 10 - bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed $hbox{AlO}_{X}$ gate dielectric. The CMOS inverter shows a gain of $-$95.3 V/V at $V_{rm DD}$ of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at $V_{rm DD}$ of 4 V.