Charge Transport Properties of Improved Reduced-Graphene-Oxide-Based Field-Effect Transistors

摘要

We investigate the effects of suppressed charge scattering on device performance of solution-processed reduced-graphene-oxide-based field-effect transistors (RGO FETs), which significantly exhibit improved field-effect mobilities to record levels, when fluoropolymer interacting layers were employed. The scattering effect of impurities atear the interface between the RGO and the fluoropolymer was modified through a screening effect of carbon-fluorine dipole interactions and a reduction in the incorporation with the -OH functional group by means of a hydrophobic surface. For the first time, we demonstrate charge transport in RGO FETs according to the temperature-dependent electrical measurements between variable-range hopping and multiple trap and thermal release. This letter, thus, provides fundamental insight into the charge transport characteristics in high-performance solution-processed RGO FETs.