机译:负电容FinFET,具有低于20mV /十年的亚阈值斜率和0.48 V的最小滞后
Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea;
Department of Electronics and Information Engineering, ICT Convergence Technology for Health and Safety, Korea University, Seoul, South Korea;
Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea;
Capacitance; FinFETs; Hysteresis; Capacitors; Logic gates; Switches;
机译:用于密集集成的陡坡负电容FinFET的设计:适当铁电电容和短沟道效应的重要性
机译:具有可忽略滞后的负电容FinFET的耐力特性
机译:具有低于10nm Ha基铁电电容器的低于60mV /十年的负电容FinFET
机译:无迟滞负电容FinFET的亚阈值摆幅和内部电压放大分析
机译:低温多晶硅薄膜晶体管中使用负电容的sub-kT / q亚阈值斜率
机译:肖特基 - 屏障硅FinFET,具有6.0 MV / DEC亚阈值斜率超过5数十年的电流