Physically Transient Memristor Synapse Based on Embedding Magnesium Nanolayer in Oxide for Security Neuromorphic Electronics

摘要

In this letter, a fully physically transient artificial synapse based on W/MgO/Mg/MgO/W memristor was realized for the first time. By embedding magnesium nanolayer in MgO switching layer, multilevel, and long-term memory with precise tuning ability was obtained. In addition, the device shows significant synaptic functions including long-term potentiation (LTP) and long-term depression (LTD). Besides, device failure can be triggered while it was immersed in deionized (DI) water for one minute at room temperature. The physically transient synaptic devices based on W/MgO/Mg/MgO/W memristor demonstrate great potential for secure neuromorphic devices, green electronics, and bioimplant electronics.