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Effect of Low-Pressure Plasma Nitriding with Hollow Cathode Discharge on the Surface Microstructure of WC-Co Cermet

机译:低压等离子体氮化与空心阴极放电对WC-Co金属陶瓷表面微观结构的影响

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WC-Co cermet was plasma-nitrided with the assistance of a hollow cathode ion source at 400 °C under a vacuum of 3–8 Pa. Hot film chemical vapor deposition (HFCVD) of a diamond coating was carried out on the nitrided specimen, without chemical etching. Scanning electronic microscopy, electron probing microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to characterize the surface microstructure of the nitride specimens and the coatings. A thin surface conversion layer with a specific structure was formed, in which the primary Co binder was transformed into Co-rich particles. The Co-rich particles consisted of a γ-Co core and a Co4N outer layer. This specific surface conversion layer significantly suppresses the out-diffusion and catalytic graphitization of Co during HFCVD. The existent phase, morphology, and density distribution of Co compounds can be tuned by varying the nitriding parameters, such as gas media, ionization ratio, bombardment energy flux, and nitriding duration.
机译:WC-Co Cermet在400℃下在3-8Pa的真空下在400℃下的辅助等离子体氮化。在氮化样品上进行金刚石涂层的热膜化学气相沉积(HFCVD),没有化​​学蚀刻。扫描电子显微镜,电子探测显微镜,X射线衍射和X射线光电子能谱用于表征氮化物样品和涂层的表面微结构。形成具有特定结构的薄表面转化层,其中将伯CO粘合剂转化成共聚的颗粒。共富富颗粒由γ-Co核和CO4N外层组成。该比表面转化层显着抑制了HFCVD期间CO的外扩散和催化石墨化。通过改变氮化参数,例如煤气介质,电离比,轰击能量通量和氮化持续时间,可以调节CO化合物的存在相,形貌和密度分布。

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