Reaction-diffusion memory unit: Modeling of sensitization, habituation and dishabituation in the brain

摘要

We propose a novel approach to investigate the effects of sensitization, habituation and dishabituation in the brain using the analysis of the reaction-diffusion memory unit (RDMU). This unit consists of Morris-Lecar-type sensory, motor, interneuron and two input excitable cables, linked by four synapses with adjustable strength defined by Hebbian rules. Stimulation of the sensory neuron through the first input cable causes sensitization by activating two excitatory synapses, C 1 and C 2 , connected to the interneuron and motor neuron, respectively. In turn, the stimulation of the interneuron causes habituation through the activation of inhibitory synapse C 3 . Likewise, dishabituation is caused through the activation of another inhibitory synapse C 4 . We have determined sensitization-habituation (BSH) and habituation-dishabituation (BHDH) boundaries as functions between synaptic strengths C 2 and C 3 at various strengths of C 1 and C 4 . When BSH and BHDH curves shift towards larger values of C 2 , the RDMU can be easily inhibited. On the contrary, the RDMU can be easily sensitized or dishabituated if BSH and BHDH curves shift towards smaller values of C 2 . Our numerical simulations readily demonstrate that higher values of the Morris-Lecar relaxation parameter, greater leakage and potassium conductances, reduced length of the interneuron, and higher values of C 1 all result in easier habituation of the RDMU. In contrast, we found that at higher values of C 4 the RDMU becomes significantly more prone to dishabituation. Based on these simulations one can quantify BSH and BHDH curve shifts and relate them to particular neural outcomes.