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首页> 外文期刊>International Journal of Electrochemical Science >Ultrafine Tin Dioxide Nanoparticles Grown on Nitrogen-doped Graphene with Rich Pyrrolic Nitrogen for Excellent Supercapacitor Performance
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Ultrafine Tin Dioxide Nanoparticles Grown on Nitrogen-doped Graphene with Rich Pyrrolic Nitrogen for Excellent Supercapacitor Performance

机译:超细锡二氧化物纳米颗粒在氮掺杂石墨烯上生长,具有富吡咯氮的优异超级电容器性能

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Composites of ultrafine tin dioxide nanoparticles grown on nitrogen-doped graphene (SnO2@NG) with high pyrrolic nitrogen content are successfully prepared via a one-step method by employing graphene oxide, tin chloride, and urea as raw materials. Morphology and microstructure of SnO2@NG are characterized by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and thermogravimetric analysis (TGA), revealing evenly dispersed SnO2 nanoparticles on the surface of nitrogen-doped graphene sheets and a SnO2 content of 54.23%. The SnO2@NG electrode exhibits a specific capacitance of 289.5 F/g at a current density of 0.5 A/g in 0.5 mol/L Na2SO4 solution and retains 92.85% of its initial capacitance after 2000 charge/discharge cycles. These results prove that SnO2@NG is an excellent material for high-performance supercapacitors.
机译:通过采用石墨烯,氯化锡和尿素作为原料,通过一步法成功地制备在氮掺杂石墨烯(SnO2 @ Ng)上生长的超细锡二氧化物纳米粒子的复合材料。 SnO2 @ Ng的形态和微观结构通过透射电子显微镜(TEM),X射线光电子能谱(XPS)和热重分析(TGA),在氮掺杂石墨烯片的表面上均匀分散的SnO2纳米颗粒和SnO2含量为54.23%。 SnO2 @ Ng电极在0.5mol / L Na 2 SO 4溶液中,在0.5A / g的电流密度下,在0.5A / g的电流密度下表现出289.5f / g的特定电容,并在2000次充电/放电循环后保留其初始电容的92.85%。这些结果证明,SnO2 @ Ng是高性能超级电容器的优异材料。

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