...
首页> 外文期刊>Coatings >Photocatalytic Properties of Copper Nitride/Molybdenum Disulfide Composite Films Prepared by Magnetron Sputtering
【24h】

Photocatalytic Properties of Copper Nitride/Molybdenum Disulfide Composite Films Prepared by Magnetron Sputtering

机译:磁控溅射制备氮化铜/钼二硫化物复合膜的光催化性能

获取原文
           

摘要

Cu3N/MoS2 composite films were prepared by magnetron sputtering under different preparation parameter, and their photocatalytic properties were investigated. Results showed that the composite films surface was uniform and had no evident cracks. When the sputtering power of MoS2 increased from 2 W to 8 W, the photocatalytic performance of the composite films showed a trend of increasing first and then decreasing. Among these films, the composite films with MoS2 sputtering power of 4 W showed the best photocatalytic degradation performance. The photocatalytic degradation rate of methyl orange at 30 min was 98.3%, because the MoS2 crystal in the films preferentially grew over the Cu3N crystal, thereby affecting the growth of the Cu3N crystal. The crystallinity of the copper nitride also increased. During photocatalytic degradation, the proper amount of MoS2 reduced the band gap of Cu3N, and the photogenerated electron hole pairs were easily separated. Thus, the films produces additional photogenerated electrons and promotes the degradation reaction of the composite films on methyl orange solution.
机译:通过在不同的制备参数下通过磁控溅射制备Cu3N / MOS2复合膜,并研究了它们的光催化性质。结果表明,复合膜表面均匀,没有明显的裂缝。当MOS2的溅射功率从2W增加到8W时,复合膜的光催化性能显示出先进的趋势,然后降低。在这些薄膜中,具有4W的MOS2溅射功率的复合膜显示出最佳的光催化降解性能。甲基橙在30分钟的光催化降解率为98.3%,因为薄膜中的MOS2晶体优先于Cu3N晶体上长,从而影响Cu3N晶体的生长。氮化铜的结晶度也增加了。在光催化降解期间,适当量的MOS2减少了Cu3N的带隙,并且易于分离了光生电子孔对。因此,薄膜产生额外的光发生电子并促进复合膜对甲基橙溶液的降解反应。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号