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Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene

机译:浆果曲率和非局部传输特性的反弱石墨烯

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Antidot graphene denotes a monolayer of graphene structured by a periodic array of holes. Its energy dispersion is known to display a gap at the Dirac point. However, since the degeneracy between the A and B sites is preserved, antidot graphene cannot be described by the 2D massive Dirac equation, which is suitable for systems with an inherent A / B asymmetry. From inversion and time-reversal-symmetry considerations, antidot graphene should therefore have zero Berry curvature. In this work, we derive the effective Hamiltonian of antidot graphene from its tight-binding wave functions. The resulting Hamiltonian is a 4 × 4 matrix with a nonzero intervalley scattering term, which is responsible for the gap at the Dirac point. Furthermore, nonzero Berry curvature is obtained from the effective Hamiltonian, owing to the double degeneracy of the eigenfunctions. The topological manifestation is shown to be robust against randomness perturbations. Since the Berry curvature is expected to induce a transverse conductance, we have experimentally verified this feature through nonlocal transport measurements, by fabricating three antidot graphene samples with a triangular array of holes, a fixed periodicity of 150?nm, and hole diameters of 100, 80, and 60?nm. All three samples display topological nonlocal conductance, with excellent agreement with the theory predictions.
机译:反向石墨烯表示由周期性孔阵列构成的石墨烯的单层。已知其能量分散在DIRAC点处显示间隙。然而,由于保留了A和B位点之间的退化,因此2D大型DIRAC方程不能描述对电解质石墨烯,其适用于具有固有A / B不对称的系统。从反转和时间反转 - 对称考虑中,反对石墨烯应该具有零浆果曲率。在这项工作中,我们从其紧密的波浪功能中获得了有效的哈密顿。由此产生的Hamiltonian是一个4×4个矩阵,非零intervalley散射术语,这负责DIAC点处的间隙。此外,由于特征障碍的双重退化,从有效的哈密顿人获得非零浆果曲率。拓扑表现被证明对随机性扰动具有稳健性。由于浆果曲率预计诱导横向电导,我们通过非局部传输测量进行了通过非本特征进行了实验验证了该特征,通过使用三角形的孔阵列,固定周期为150Ω·Nm,以及100的孔径, 80和60?nm。所有三种样本都显示出拓扑非函数的电导,与理论预测的恰当协议。

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