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Luminescence and vacuum ultraviolet excitation spectroscopy of cerium doped Gd 3Ga 3Al 2O 12 single crystalline scintillators under synchrotron radiation excitations

机译:发光和真空紫外线激励谱掺杂GD 3 GA 3 AL 2 O 12 单晶闪烁器在同步辐射激励下

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Cerium doped Gd3Ga3Al2O12(GGAG) single crystals as well as GGAG:Ce single crystals co-doped by divalent (Mg2+, Ca2+), trivalent (Sc3+) or tetravalent (Zr4+, Ti4+) ions have been studied by means of the excitation luminescence spectroscopy in vacuum ultraviolet spectral range. Synchrotron radiation from the undulator beam was utilized for the luminescence excitation in the energy range from 4.5 to 800?eV. The influence of the co-dopant ions on the excitonic transitions as well as on the intrinsic defects in GGAG was revealed examining the luminescence emission and excitation spectra of both Gd3+and Ce3+ions in all single crystals studied. Special attention was paid to the analysis of Ce3+excitation spectra in VUV spectral range (4.5–45?eV) where multiplication of electronic excitation (MEE) processes occur. It was obtained that GGAG:Ce single crystals having different co-dopant ions reveal distinguished efficiency of MEE. The role of intrinsic defects in MEE processes in the co-doped GGAG:Ce single crystals was elucidated.
机译:通过激发发光光谱研究,通过激发发光光谱研究了掺杂铈的Gd3ga3A12O12(GGAG)单晶以及通过二价(Mg3 +,Ca2 +),三价(SC3 +)或四价(Zr4 +,Ti 4 +)离子的单一晶体真空紫外光谱范围。来自波梁梁的同步辐射用于能量范围内的发光激发从4.5至800°10°。揭示了在研究所有单晶中的GD3 +和CE3 +离子的发光发射和激发光谱,揭示了副掺杂剂离子对GGAG中的内在缺陷的影响。在VUV光谱范围(4.5-45 eV)中,CE3 +激发光谱的分析是特别的注意,其中发生电子激励(MEE)过程的乘法。获得了GGAG:Ce具有不同共掺杂离子的单一晶体揭示了Mee的杰出效率。阐明了在共掺杂GGG中的MEE工艺中的内在缺陷:Ce单晶的作用。

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