Highly Crystalline CVD-grown Multilayer MoSe₂ Thin Film Transistor for Fast Photodetector

摘要

Hexagonal molybdenum diselenide (MoSe₂) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760?Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe₂ thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650?°C) after the CVD growth for 10?min. Our MoSe₂ TFT with a reasonably high field-effect mobility (10?cm2/V?·?s) exhibits a high photoresponsivity (93.7?A/W) and a fast photoresponse time (τ_rise?~?0.4?s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe₂ TFTs for photodetector applications.