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首页> 外文期刊>Bulletin of the Korean Chemical Society >Ba9Ge3N10: A New Ternary Nitride Containing Isolated Planar
Triangular Anions of [GeN3]5?
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Ba9Ge3N10: A New Ternary Nitride Containing Isolated Planar
Triangular Anions of [GeN3]5?

机译:Ba 9 Ge 3 N 10 :含有[GeN 3 的孤立平面
三角阴离子的三元氮化物>] 5?

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摘要

A new nitride, Ba9Ge3N10, was obtained as single crystals from constituent elements in molten Na. It crystallizes in space group R-3c (No. 167) with a = 7.9399(2) A, c = 17.282(1) A, and Z = 2. It contains the first example of isolated nitridometallate anions of GeN35? in perfect planar triangular shape. Ge-N bond length is 1.786(8) A, which is significantly shorter than any known Ge-N bonds, ranging from 1.84 A to 1.95 A. Valence bond model suggests partial multiple bonding character of the Ge-N bond, which is the first example of such bonding configuration for Ge-N bond. N-centered polyhedral perspective suggests the structure of Ba9Ge3N10 can be conceived as the cationic framework of [Ba9Ge3N9]3+, whose 1/3 of the octahedral interstitial sites are occupied by N3? anions.
机译:从熔融Na中的构成元素获得了一种新的氮化物Ba9Ge3N10,作为单晶。它在R-3c(No. 167)空间群中结晶,a = 7.9399(2)A,c = 17.282(1)A,Z =2。它包含GeN35?的分离的亚硝酸金属盐阴离子的第一个实例。以完美的平面三角形形状。 Ge-N键的长度为1.786(8)A,比任何已知的Ge-N键的长度都短得多,范围为1.84 A至1.95A。化合价键模型表明Ge-N键的部分多重键合特性是Ge-N键的这种键合构型的第一个例子。以N为中心的多面体观点表明,Ba9Ge3N10的结构可以被认为是[Ba9Ge3N9] 3+的阳离子骨架,其八面体间隙的1/3被N3占据。阴离子。

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