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首页> 外文期刊>Journal of Physics Communications >Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
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Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

机译:受控制噪声影响的半导体自旋量子比特实现中的门保真度比较

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A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.
机译:报告了量子点中定义的不同自旋量子位类型与施主在不同控制误差下的门保真度的比较。我们研究了五种量子位类型,分别是量子点自旋量子位,双量子点单重态-三重态量子位,双量子点混合量子位,施主量子位和量子点自旋施主量子位。对于每一个,我们导出了分析时间序列,这些序列实现了沿Bloch球主轴线的单个量子位旋转。我们通过使用高斯噪声模型来估计控制误差对门保真度的影响。然后,通过使用一组实际的控制幅度误差参数值,比较了由于脉冲时序误差而导致的量子位实现之间的门保真度。

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