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Effects of Dy2O3 on the Dielectric Property, Phase Composition, and Microstructure of the Low Temperature Sintered Aln Ceramics

机译:Dy2O3对低温烧结Aln陶瓷介电性能,相组成和微观结构的影响

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The effects of Dy 2 O 3 on the phase composition, microstructure, and the dielectric property, especially, dielectric constant, of AlN ceramics sintered at low-temperature (1650 o C), were investigated systematically. X-ray diffraction (XRD) was employed to indentify the phase compositions of the ceramics during the sintering. Scanning electronic microscopy (SEM) was used to observe the microstructures of the AlN ceramics. The results show that the dielectric constant changes with the amount of Dy 2 O 3 . When the amount of Dy 2 O 3 is less than 0.93 wt.%, the dielectric constant increases with the increased amount of Dy 2 O 3 . The dielectric constant of the AlN ceramics is higher than 200 when the amount of Dy 2 O 3 is 0.93 wt.%. However, when the amount of Dy 2 O 3 is more than 0.93 wt.%, the dielectric constant decreases with the increased amount of Dy 2 O 3 . The dielectric constant of the AlN ceramics with 1.87 wt.% Dy 2 O 3 is only about 15, which closed to the theoretical value of pure AlN ceramics. The analysis illuminated that the grain phases changed from Al 2 O 3 -rich aluminate to AlDyO 3 which existed at triple pockets with the increased amount of Dy 2 O 3 , the former can improve the dielectric constant greatly due to ion relaxation polarization.
机译:系统地研究了Dy 2 O 3对在低温(1650 o C)下烧结的AlN陶瓷的相组成,微观结构和介电性能,特别是介电常数的影响。 X射线衍射(XRD)用于确定烧结过程中陶瓷的相组成。使用扫描电子显微镜(SEM)观察AlN陶瓷的微观结构。结果表明,介电常数随Dy 2 O 3含量的变化而变化。当Dy 2 O 3的量小于0.93wt。%时,介电常数随着Dy 2 O 3的增加而增加。当Dy 2 O 3的含量为0.93重量%时,AlN陶瓷的介电常数高于200。然而,当Dy 2 O 3的量大于0.93wt。%时,介电常数随着Dy 2 O 3的增加而降低。具有1.87重量%的Dy 2 O 3的AlN陶瓷的介电常数仅为约15,其接近纯AlN陶瓷的理论值。分析表明,随着Dy 2 O 3含量的增加,晶粒相从富Al 2 O 3的铝酸盐变为存在于三重晶格处的AlDyO 3,由于离子弛豫极化,前者可以大大提高介电常数。

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