In this paper we present an analytical model to optimize the thermal and electrical layout for multilayer structureelectronic devices through the solution to the non-linear 3-D heat equation. The thermal solution is achieved by theKirchhoff transform and the 2-D Fourier transform. The model is general and can be easily applied to a large variety of integrateddevices, provided that their structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. Moreover, it is independent on the specific physicalproperties of the layers, hence GaAs FETs, HBT and HEMTs as well as Silicon and Silicon-On-Insulator MOSFETsand heterostructure LASERs can be analyzed
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