A STUDY OF ERASING IN PROGRAMMABLE ELECTRICALLY ERASABLE READ ONLY MEMORY (EEPROM) WITH VERY THIN OXIDE TUNNEL

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A STUDY OF ERASING IN PROGRAMMABLE ELECTRICALLY ERASABLE READ ONLY MEMORY (EEPROM) WITH VERY THIN OXIDE TUNNEL

机译：超薄氧化物隧道可编程电可擦只读存储器（EEPROM）擦除的研究

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《The African Review of Physics》 |2008年第2008期|共页
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1. A STUDY OF ERASING IN PROGRAMMABLE ELECTRICALLY ERASABLE READ ONLY MEMORY (EEPROM) WITH VERY THIN OXIDE TUNNEL [J] . A. M. BOUNAB, M. BENOUAKTA, S. LATRECHE The African Physical Review . 2008,第2008期

机译：超薄氧化物隧道可编程电可擦只读存储器（EEPROM）擦除的研究
2. Thermal Stress Analysis of Floating-Gate Tunneling Oxide Electrically Erasable Programmable Read Only Memory During Manufacturing Process [J] . 宗祥福, 王旭, 翁于闵, 中国物理快报：英文版 . 1998,第010期

机译：在制造过程中，浮栅隧道电气可擦除可编程只读存储器的热应力分析
3. Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress [J] . Plossu C., Monti N., Bouchakour R., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2001,第1a3期

机译：动态应力下电可擦只读存储器隧道氧化物的导电特性
4. An Error Detection And Management Approach For Nonvolatile Electrically Erasable And Programmable Read Only Memory (EEPROM) Systems [C] . Hoffman, H.F., Sebas, . 1993

机译：非易失性电可擦可编程只读存储器（EEPROM）系统的错误检测和管理方法
5. Program, erase, and read transient models for a flash EEPROM. [D] . Wolfson, Scott Corey. 2006

机译：编程，擦除和读取闪存EEPROM的瞬态模型。
6. Impact of program/erase operation on the performances of oxide-based resistive switching memory [O] . Guoming Wang, Shibing Long, Zhaoan Yu, 2015

机译：编程/擦除操作对基于氧化物的电阻式开关存储器性能的影响
7. High Density and Low Voltage Programmable Scaled SONOS Nonvolatile Memory for the Byte and Flash-Erased Type EEPROMs [O] . 2002

机译：高密度和低压可编程缩放Sonos非易失性存储器，用于字节和闪存型EEPROM

A STUDY OF ERASING IN PROGRAMMABLE ELECTRICALLY ERASABLE READ ONLY MEMORY (EEPROM) WITH VERY THIN OXIDE TUNNEL

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