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Degradation process in organic thin film devices fabricated using P3HT

机译:使用P3HT制造的有机薄膜器件中的降解过程

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The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have been investigated under normal environmental conditions (25?°C and RH a?? 45-50%). Electrical and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility e??? of the order of 10-4 cm2/V-s has been obtained from the e?‘‰2 law in the as- deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature of PEDOT.
机译:已经研究了在正常环境条件下(25℃和RH a2)夹在氧化铟锡(ITO)和铝(Al)电极之间的规整型聚(3-己基噻吩2,5-二基)(P3HT)薄膜的稳定性。 ?45-50%)。在30天内研究了ITO / P3HT / Al器件的电学和光学特性。流动性e ???从沉积的P3HT薄膜中的e 2′定律已经获得约10-4cm 2 / Vs的数量级。扫描电子显微镜(SEM)研究表明,施加电压后,带有聚(3,4-乙撑二氧噻吩)(PEDOT)中间层的器件中的铝触点起泡,而没有PEDOT的器件中未见起泡。已根据捕集阱的产生和繁殖以及PEDOT的吸湿特性对结果进行了解释。

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