Photoacoustic spectroscopy of thin ???lms of As2S3, As2Se3 and GeSe2

摘要

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As2S3, As2Se3 and GeSe2 exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting ???lms is necessary to study the memory density. The thermal conductivity of thin ???lms of As2S3 (thickness 100 e???m and 80 e???m), As2Se3 (thickness 100 e???m and 80 e???m) and GeSe2 (thickness 120 e???m and 100 e???m) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker ???lms is larger than the thinner ???lms. This can be explained by the thermal resistance effect between the ???lm and the surface of the substrate.