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首页> 外文期刊>Physical Review X >Kondo Hybridization and the Origin of Metallic States at the (001) Surface of class='aps-inline-formula'>SmB6
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Kondo Hybridization and the Origin of Metallic States at the (001) Surface of class='aps-inline-formula'>SmB6

机译:近藤杂交和 class =“ aps-inline-formula”> SmB 6的(001)表面的金属态起源

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SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely, the Kondo-hybridization gap. Since the Kondo gap arises from many-body electronic correlations, SmB6 would be placed at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo-hybridization process is the key to unraveling the origin of the two types of metallic states experimentally observed by angle-resolved photoelectron spectroscopy (ARPES) in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin and cuts the Fermi level due to the position of the chemical potential 20?meV above the lowest-lying 5d-4f hybridization zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raise the bar in terms of the ARPES resolution required, as we show there to be a strong renormalization of the hybridization gaps by a factor 2–3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent local-density-approximation (LDA)+Gutzwiller calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6 and pointing the way for future, ultrahigh-resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator.
机译:SmB6是一种著名的近藤绝缘子,已被认为是一种理想的拓扑绝缘子,其拓扑特征状态位于干净的体电子间隙(即近藤杂交间隙)中。由于近藤间隙是由多体电子相关性引起的,因此SmB6将被置于新材料类别的顶端:拓扑近藤绝缘子。在这里,我们首次展示了近藤杂化过程的k空间特征,是揭示电子带中角度分辨光电子能谱(ARPES)实验观察到的两种金属态起源的关键SmB6(001)的结构。这些状态中的一组基本上是本体起源的,并且由于化学势位于最低的5d-4f杂交区上方20?meV的位置而降低了费米能级。另一金属态更神秘,强度弱,但是代表拓扑表面态的良好候选者。但是,在可以通过对其无质量分散关系的明确测量证实这一主张之前,我们的数据提出了所需的ARPES分辨率方面的标准,因为我们显示出杂交缺口的重新归一化强度是2-3倍与理论相比,这是根据对化学势的真实位置的了解,并与最近的局部密度近似(LDA)+ Gutzwiller计算得出的预测进行了仔细的比较。总而言之,这些关键证据充当了三角剖分标记,提供了SmB6中电子景观的详细描述,并为未来的超高分辨率ARPES实验指明了道路,以实现对第一个拓扑近藤中Dirac锥的直接测量绝缘子。

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