Temperature dependence of the conduction electron Lande g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in the magnetic field by the electron-phonon interaction in the second-order perturbation theory. Interaction with lattice vibrations decreases the conduction electron g-factor. The g-factor was measured in the electron spin resonance experiments for n-Si samples. In the high temperature limit the g-factor linearly decreases with temperature in good agreement with the experimental data.
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